S3C2400 Datasheet, PDF (480/488 Pages) Samsung semiconductor – RISC MICROPROCESSOR

ELECTRICAL DATA
S3C2400 RISC MICROPROCESSOR
Table 23-17. USB Electrical Specifications
(V_DD = 1.8 V ± 0.15 V, T_A = 0 to 70 °C, V_EXT = 3.3V ± 0.3V)
Parameter
Symbol
Condition
Min
Supply Current
Suspend Device
ICCS
Max
10
Unit
µA
Leakage Current
Hi-Z state Input Leakage
Input Levels
Differential Input Sensitivity
Differential Common Mode
Range
Single Ended Receiver
Threshold
Output Levels
Static Output Low
Static Output High
Capacitance
Transceiver Capacitance
ILO 0V < VIN < 3.3V
VDI | (D+) – (D-) |
VCM Includes VDI range
VSE
VOL
VOH
RL of 1.5Kohm to 3.6V
RL of 15Kohm to GND
CIN Pin to GND
-10
10
µA
0.2
V
0.8
2.5
0.8
2.0
0.3
V
2.8
3.6
20
pF
Table 23-18. USB Full Speed Output Buffer Electrical Characteristics
(V_DD = 1.8 V ± 0.15 V, T_A = 0 to 70 °C, V_EXT = 3.3V ± 0.3V)
Parameter
Symbol
Condition
Min
Max
Unit
Driver Characteristics
Transition Time
Rise Time
Fall Time
Rise/Fall Time Matching
TR
TF
TRFM
CL = 50pF
CL = 50pF
(TR / TF )
4.0
2.0
ns
4.0
2.0
90
110
%
Output Signal Crossover
Voltage
VCRS
1.3
2.0
V
Drive Output Resistance
ZDRV
Steady state drive
28
43
ohm
23-46