K4H560438J Datasheet, PDF (23/24 Pages) Samsung semiconductor – 256Mb J-die DDR SDRAM Specification

K4H560438J
K4H560838J
K4H561638J
90
80
70
60
50
40
30
20
10
0
0.0
DDR SDRAM
Maximum
Typical High
Typical Low
Minimum
1.0
2.0
Pulldown Characteristics for Weak Output Driver
Vout(V)
0.0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
1.0
2.0
Pullup Characteristics for Weak Output Driver
Minumum
Typical Low
Typical High
Maximum
Vout(V)
Figure 5. I/V characteristics for input/output buffers:Pulldown(above) and pullup(below)
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Rev. 1.12 August 2008