K4H560438J Datasheet, PDF (11/24 Pages) Samsung semiconductor – 256Mb J-die DDR SDRAM Specification

K4H560438J
K4H560838J
K4H561638J
DDR SDRAM
12.0 DDR SDRAM Spec Items & Test Conditions
Conditions
Operating current - One bank Active-Precharge;
tRC=tRCmin; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
DQ,DM and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles.
Operating current - One bank operation ; One bank open, BL=4, Reads
- Refer to the following page for detailed test condition
Precharge power-down standby current; All banks idle; power - down mode;
CKE = <V_IL(max); tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
V_IN = V_REF for DQ,DQS and DM.
Precharge Floating standby current; CS > =V_IH(min);All banks idle; CKE > = V_IH(min); tCK=10ns for
DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; Address and other control inputs changing
once per clock cycle; V_IN = V_REF for DQ,DQS and DM
Precharge Quiet standby current; CS > = V_IH(min); All banks idle;
CKE > = V_IH(min); tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; Address and
other control inputs stable at >= V_IH(min) or =<V_IL(max); V_IN = V_REF for DQ ,DQS and DM
Active power - down standby current ; one bank active; power-down mode;
CKE=< V_IL (max); tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
Vin = Vref for DQ,DQS and DM
Active standby current; CS >= V_IH(min); CKE>=V_IH(min);
one bank active; active - precharge; tRC=tRASmax; tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for
DDR333, 5ns for DDR400; DQ, DQS and DM inputs changing twice per clock cycle; address and other control
inputs changing once per clock cycle
Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control
inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at 7.5ns for DDR266, CL=2.5 at
tCK=7.5ns for DDR266, tCK=6ns for DDR333, CL=3 at tCK=5ns for DDR400; 50% of data changing on every
transfer; lout = 0 m A
Operating current - burst write; Burst length = 2; writes; continuous burst;
One bank active address and control inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2
at tCK=7.5ns for DDR266, CL=2.5 at tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; DQ, DM and DQS
inputs changing twice per clock cycle, 50% of input data changing at every burst
Auto refresh current; tRC = tRFC(min) which is 8*tCK for DDR200 at tCK=10ns; 10*tCK for DDR266 at
tCK=7.5ns; 12*tCK for DDR333 at tCK=6ns, 14*tCK for DDR400 at tCK=5ns; distributed refresh
Self refresh current; CKE =< 0.2V; External clock on; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for
DDR333, 5ns for DDR400.
Operating current - Four bank operation ; Four bank interleaving with BL=4
-Refer to the following page for detailed test condition
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7A
13.0 Input/Output Capacitance
( T_A= 25°C, f=100MHz)
Parameter
Symbol Min
Max DeltaCap(max) Unit Note
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
C_IN1
2
3
0.5
pF
4
Input capacitance( CK, CK )
C_IN2
2
3
0.25
pF
4
Data & DQS input/output capacitance
C_OUT
4
5
Input capacitance(DM for x4/8, UDM/LDM for x16) C_IN3
4
5
pF 1,2,3,4
0.5
pF 1,2,3,4
Note :
1.These values are guaranteed by design and are tested on a sample basis only.
2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins.
This is required to match signal propagation times of DQ, DQS, and DM in the system.
3. Unused pins are tied to ground.
4. This parameteer is sampled. For DDR266 and DDR333 V_DDQ = +2.5V +0.2V, V_DD = +2.5V+0.2V. For DDR400, V_DDQ = +2.6V +0.1V, V_DD = +2.6V
+0.1V. For all devices, f=100MHz, tA=25°C, V_OUT(DC) = V_DDQ/2, Vout(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact
that they are matched in loading (to facilitate trace matching at the board level).
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Rev. 1.12 August 2008