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K4H560438J Datasheet, PDF (14/24 Pages) Samsung semiconductor – 256Mb J-die DDR SDRAM Specification
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K4H560438J
K4H560838J
K4H561638J
DDR SDRAM
16.0 AC Operating Conditions
Parameter/Condition
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
Min
VREF + 0.31
0.7
0.5*VDDQ-0.2
Max
VREF - 0.31
VDDQ+0.6
0.5*VDDQ+0.2
Unit
V
V
V
V
Note :
1. VID is the magnitude of the difference between the input level on CK and the input level on CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
Note
1
2
17.0 AC Overshoot/Undershoot specification for Address and Control Pins
Parameter
DDR400
Specification
DDR333 DDR200/266
Maximum peak amplitude allowed for overshoot
1.5 V
1.5 V
1.5 V
Maximum peak amplitude allowed for undershoot
1.5 V
1.5 V
1.5 V
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
4.5 V-ns
4.5 V-ns
4.5 V-ns
4.5 V-ns
4.5 V-ns
4.5 V-ns
VDD
Overshoot
5
4
3
2
Area
1
0
-1
-2
Maximum Amplitude = 1.5V
-3
Maximum Amplitude = 1.5V
GND
-4
-5
0 0.6875 1.5 2.5 3.5 4.5 5.5 6.3125 7.0
0.5 1.0 2.0 3.0 4.0 5.0 6.0 6.5
Tims(ns)
undershoot
AC overshoot/Undershoot Definition
14 of 24
Rev. 1.12 August 2008
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