S3C72P9 Datasheet, PDF (202/225 Pages) Samsung semiconductor – SINGLE-CHIP MICROCONTROLLER HAS BEEN DESIGNED FOR HIGH PERFORMANCE USING

ELECTRICAL DATA
S3C72P9/P72P9 (Preliminary Spec)
Table 14-2. D.C. Electrical Characteristics (Concluded)
(T_A = – 40 ^°C to + 85 ^°C, V_DD = 1.8 V to 5.5 V)
Parameter Symbol
Conditions
Supply
Current
I_DD1 ⁽²⁾
V_DD = 5 V ± 10%
Crystal oscillator
C1 = C2 = 22 pF
6.0 MHz
4.19 MHz
V_DD = 3 V ± 10%
6.0 MHz
4.19 MHz
I_DD2 ⁽²⁾
Idle mode;
V_DD = 5 V ± 10%
Crystal oscillator
C1 = C2 = 22 pF
6.0 MHz
4.19 MHz
V_DD = 3 V ± 10%
6.0 MHz
4.19 MHz
I_DD3 ^{(3) V}DD ^{= 3 V ± 10%}
32 kHz crystal oscillator
I_DD4 ^{(3) Idle mode; V}DD ^{= 3 V ± 10%}
32 kHz crystal oscillator
I_DD5 Stop mode;
V_DD = 5 V ± 10%
SCMOD =
0000B
Stop mode;
V_DD = 3 V ± 10%
XT = 0V
Stop mode;
V_DD = 5 V ± 10%
SCMOD =
0100B
Stop mode;
V_DD = 3 V ± 10%
Min
–
–
Typ
3.9
2.9
1.8
1.3
1.3
1.2
0.5
0.44
15.3
6.4
2.5
0.5
0.2
0.1
Max
Units
8.0
mA
5.5
4.0
3.0
2.5
1.8
1.5
1.0
30
µA
15
5
3
3
2
NOTES:
1. Data includes power consumption for subsystem clock oscillation.
2. When the system clock control register, SCMOD, is set to 1001B, main system clock oscillation stops and the
subsystem clock is used.
3. Currents in the following circuits are not included; on-chip pull-up resistors, internal LCD voltage dividing resistors,
output port drive currents.
14-4