DS_K6F2008U2E Datasheet, PDF (2/10 Pages) Samsung semiconductor – 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2008U2E Family
CMOS SRAM
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 32-TSOP1-0813.4F, 48(36)-TBGA-6.00x7.00
GENERAL DESCRIPTION
The K6F2008U2E families are fabricated by SAMSUNG′s
advanced Full CMOS process technology. The families support
various operating temperature ranges and have various pack-
age types for user flexibility of system design. The families also
supports low data retention voltage for battery back-up opera-
tion with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
Speed(ns)
Power Dissipation
Standby Operating
(ISB1, Typ.) (ICC1, Max)
PKG Type
K6F2008U2E-F
Industrial(-40~85°C)
2.7~3.3V 55¹⁾/70ns
0.5µA²⁾
2mA
32-TSOP1-0813.4F
48(36)-TBGA-6.00x7.00
1. The parameter is measured with 30pF test load.
2. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A11 1
A9 2
A8 3
A13 4
WE 5
CS2 6
A15 7
VCC 8
A17 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
32
31
30
29
28
27
32-sTSOP
26
25
Type1-Forward
24
23
22
21
20
19
18
17
1
2
3
4
5
6
A
A0
A1 CS2 A3
A6
A8
B
I/O5 A2 WE A4
A7 I/O1
C
I/O6
DNU A5
I/O2
D
VSS
VCC
48(36)-TBGA
E
VCC
VSS
F
I/O7
DNU A17
I/O3
G
I/O8 OE CS1 A16 A15 I/O4
H
A9
A10 A11 A12 A13
A14
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
Clk gen.
Precharge circuit.
Row
select
Memory array
1024 rows
256x8 columns
I/O1
Data
I/O Circuit
I/O8
cont
Column select
Data
cont
Address
CS1
CS2 Control
WE
logic
OE
Name
Function
Name
Function
CS1, CS2 Chip Select Input I/O1~I/O8 Data Inputs/Outputs
OE Output Enable
Vcc Power
WE Write Enable Input Vss Ground
A0~A17 Address Inputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 2.0
April 2002