DS_K6F2008U2E Datasheet, PDF (10/10 Pages) Samsung semiconductor – 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2008U2E Family
PACKAGE DIMENSIONS
48(36) TAPE BALL GRID ARRAY(0.75mm ball pitch)
Top View
B
#A1
CMOS SRAM
Units: millimeters
Bottom View
B
B1
6
A
B
C
D
E
F
G
H
5 4 3 21
Side View
D
C
Min
Typ
Max
A
-
0.75
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
6.90
7.00
7.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
0.80
0.90
1.00
E1
-
0.55
-
E2
0.30
0.35
0.40
Y
-
-
0.08
B/2
Detail A
A
Y
Notes.
1. Bump counts: 48(8 row x 6 column)
2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are +/-0.050 unless
otherwise specified.
4. Typ: Typical
5. Y is coplanarity: 0.08(Max)
10
Revision 2.0
April 2002