K4X51163PE-L Datasheet, PDF (16/20 Pages) Samsung semiconductor – 32Mx16 Mobile DDR SDRAM

K4X51163PE - L(F)E/G
Mobile DDR SDRAM
17. AC Overshoot/Undershoot Specification for Address & Control Pins
Parameter
Maximum peak Amplitude allowed for overshoot area
Maximum peak Amplitude allowed for undershoot area
Maximum overshoot area above VDD
Maximum undershoot area below VSS
Specification
0.9V
0.9V
3V-ns
3V-ns
Maximum Amplitude
Overshoot Area
Volts
(V)
VDD
VSS
Maximum Amplitude
Undershoot Area
Time (ns)
Figure 7. AC Overshoot and Undershoot Definition for Address and Control Pins
18. AC Overshoot/Undershoot Specification for CLK, DQ, DQS and DM Pins
Parameter
Maximum peak Amplitude allowed for overshoot area
Maximum peak Amplitude allowed for undershoot area
Maximum overshoot area above VDDQ
Maximum undershoot area below VSSQ
Specification
0.9V
0.9V
3V-ns
3V-ns
Maximum Amplitude
Overshoot Area
Volts
(V)
VDDQ
VSSQ
Maximum Amplitude
Undershoot Area
Time (ns)
Figure 8. AC Overshoot and Undershoot Definition for CLK, DQ, DQS and DM Pins
- 19 -
June 2007