K4X51163PE-L Datasheet, PDF (15/20 Pages) Samsung semiconductor – 32Mx16 Mobile DDR SDRAM

K4X51163PE - L(F)E/G
Mobile DDR SDRAM
15. AC Operating Test Conditions(VDD = 1.7V to 1.95V, Tc = -25 to 85°C)
Parameter
AC input levels (Vih/Vil)
Input timing measurement reference level
Input signal minimum slew rate
Output timing measurement reference level
Output load condition
Value
0.8 x VDDQ / 0.2 x VDDQ
0.5 x VDDQ
1.0
0.5 x VDDQ
See Figure 6
Unit
V
V
V/ns
V
Output
10.6KΩ
1.8V
13.9KΩ
VOH (DC) = 0.9 x VDDQ , IOH = -0.1mA
VOL (DC) = 0.1 x VDDQ , IOL = 0.1mA
20pF
Figure 5. DC Output Load Circuit
Vtt=0.5 x VDDQ
Output
Z0=50Ω
50Ω
20pF
Figure 6. AC Output Load Circuit
16. Input/Output Capacitance(VDD=1.8, VDDQ=1.8V, TC = 25°C, f=1MHz)
Parameter
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM)
Symbol
Min
Max
Unit
CIN1
1.5
3.0
pF
CIN2
1.5
3.5
pF
COUT
2.0
4.5
pF
CIN3
2.0
4.5
pF
- 18 -
June 2007