K4D28163HD Datasheet, PDF (14/16 Pages) Samsung semiconductor – 128Mbit DDR SDRAM

K4D28163HD
128M DDR SDRAM
AC CHARACTERISTICS (I)
Parameter
Symbol
Row cycle time
tRC
Refresh row cycle time
tRFC
Row active time
tRAS
RAS to CAS delay
tRCD
Row precharge time
tRP
Row active to Row active
tRRD
Last data in to Row precharge _tWR
@Normal Precharge
Last data in to Row precharge
@Auto Precharge
tWR_A
Last data in to Read command tCDLR
Col. address to Col. address tCCD
Mode register set cycle time tMRD
Auto precharge write recovery
+ Precharge
tD A L
Exit self refresh to read com- _tXSR
-36
Min
Max
15
-
17
-
10
100K
5
-
5
-
2
-
3
-
3
-
2
-
1
-
2
-
8
-
200
-
-40
Min
Max
14
-
16
-
9
100K
5
-
5
-
2
-
3
-
3
-
2
-
1
-
2
-
8
-
200
-
-50
Min
Max
12
-
14
-
8
100K
4
-
4
-
2
-
2
-
3
-
2
-
1
-
2
-
7
-
200
-
Power down exit time
Refresh interval time
tPDEX
1tCK+tIS
-
1tCK+tIS
-
1tCK+tIS
-
tR E F
7.8
-
7.8
-
15.6
-
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
-60
Min
Max
10
-
12
-
7
100K
3
-
3
-
2
-
2
-
3
-
2
-
1
-
2
-
6
-
200
-
1tCK+tIS
-
15.6
-
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK 1
tCK 1
tCK 1
tCK
tCK
tCK
tCK
ns
us
AC CHARACTERISTICS (II)
(Unit : Number of Clock)
K4D28163HD-TC36
Frequency
Cas Latency tRC
tRFC
tRAS
tRCD
tRP
tRRD
tDAL
Unit
275MHz ( 3.6ns )
3
15
17
10
5
5
2
8
tCK
250MHz ( 4.0ns )
3
14
16
9
5
5
2
8
tCK
200MHz ( 5.0ns )
3
12
14
8
4
4
2
7
tCK
166MHz ( 6.0ns )
3
10
12
7
3
3
2
6
tCK
K4D28163HD-TC40
Frequency
Cas Latency tRC
tRFC
tRAS
tRCD
tRP
tRRD
tDAL
Unit
250MHz ( 4.0ns )
3
14
16
9
5
5
2
8
tCK
200MHz ( 5.0ns )
3
12
14
8
4
4
2
7
tCK
166MHz ( 6.0ns )
3
10
12
7
3
3
2
6
tCK
K4D28163HD-TC50
Frequency
Cas Latency tRC
tRFC
tRAS
tRCD
tRP
tRRD
tDAL Unit
200MHz ( 5.0ns )
3
12
14
8
4
4
2
7
tCK
166MHz ( 6.0ns )
3
10
12
7
3
3
2
6
tCK
- 14 -
Rev. 1.4(Aug. 2002)