K4D28163HD Datasheet, PDF (11/16 Pages) Samsung semiconductor – 128Mbit DDR SDRAM

K4D28163HD
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
Parameter
Symbol
Test Condition
-36
Operating Current
(One Bank Active)
Burst Lenth=2 tRC ≥ tRC(min)
ICC1
200
IOL=0mA, tCC= tCC(min)
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VI H(min), CS ≥ VI H(min),
tCC= tCC(min)
70
Active Standby Current
power-down mode
ICC3P CKE ≤ VIL(max), tCC= tCC(min)
100
Active Standby Current in
in Non Power-down mode
CKE ≥ VIH(min), CS ≥ VIH(min),
ICC3N
tCC= tCC (min)
130
Operating Current
( Burst Mode)
ICC4
tRC ≥ tRFC(min)tRC ≥ tRFC(min)
380
Page Burst, All Banks activated.
Refresh Current
ICC5
tRC ≥ tRFC(min)
250
Self Refresh Current
ICC6
CKE ≤ 0.2V
Note : 1. Measured with outputs open.
128M DDR SDRAM
Version
-40
-50
190
170
5
65
60
90
75
120
110
350
310
220
210
2
Unit Note
-60
165 mA 1
mA
60
mA
70
mA
90
mA
280 mA
200 mA
mA
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, V DD=3.3V+ 5%, V DDQ=2.5V+ 5%,T A=0 to 65° C)
Parameter
Input High (Logic 1) Voltage; DQ
Symbol
VIH
Min
VREF +0.35
Typ
-
Max
-
Unit
V
Input Low (Logic 0) Voltage; DQ
V IL
-
-
VREF -0.35
V
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VD D Q+0.6
V
Clock Input Crossing Point Voltage; CK and CK
VIX
0 . 5 * VDDQ- 0 . 2
-
0.5*VDDQ +0.2
V
Note
1
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
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Rev. 1.4(Aug. 2002)