STB416D Datasheet, PDF (8/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STB416D
120
ID=-8A
100
80
60
125 C
40
75 C ^{25 C}
20
0
0
2
4
6
8
10
VGS, Gate-Source Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1800
1500
1200
Ciss
900
600
300
Crss
0
0
5
Coss
10 15 20 25 30
VDS, Drain-to Source Voltage (V)
Figure 9. Capacitance
20
125 C
10
Ver 1.0
75 C
25 C
1
0
0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8 ^{VDS =-20V}
ID=-8A
6
4
2
0
0 3 6 9 12 15 18 21 24
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
1000
100
10
TD(off )
Tf
Tr
TD(on)
VDS=-20V,ID=-1A
VGS=-10V
1
1
6 10
60 100
Rg, Gate Resistance (Ω)
Figure 11. Switching Characteristics
8
100
10
R ^{DS(ON) Limit}
10us
100us
D1C0ms1ms
1
V GS =-10V
S ingle P ulse
Tc=25 C
0.1
1
10
100
VDS, Gate-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
May,11,2010
www.samhop.com.tw