STB416D Datasheet, PDF (2/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STB416D
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min ^Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
40
V
1
A
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^c
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^c
tD(ON)
Turn-On DelayTime
tr
Rise Time
tD(OFF)
Turn-Off DelayTime
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=9A
VGS=4.5V , ID=7.5A
VDS=10V , ID=9A
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=20V,ID=9A,VGS=10V
VDS=20V,ID=9A,VGS=4.5V
VDS=20V,ID=9A,
VGS=10V
1 1.9
3
V
22 28 m ohm
32 43 m ohm
20
S
700
pF
78
pF
60
pF
13.5
ns
12.2
ns
17
ns
19.5
ns
11.5
nC
5.7
nC
1.3
nC
3.2
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=2A
0.8 1.3
V
May,11,2010
2
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