STB416D Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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Product
STB416D
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
40V
18A
28 @ VGS=10V
43 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
-40V
-16A
36 @ VGS=-10V
61 @ VGS=-4.5V
D1/D2
S1
G1 _D1/D2
S2
G2
STB SERIES
TO-263 5L
D1
D2
G1
G2
S 1 N-ch
S 2 P-ch
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
N-Channel P-Channel
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
40
-40
±20
±20
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
18
-16
14.4
-12.8
I_DM
-Pulsed ^b
40
-40
E_AS
Sigle Pulse Avalanche Energy ^d
36
64
P_D
Maximum Power Dissipation ^a
TC=25°C
TC=70°C
15.6
10
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
R _JA
Thermal Resistance, Junction-to-Ambient
8
°C/W
80
°C/W
May,11,2010
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