STB416D Datasheet, PDF (3/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STB416D
Ver 1.0
P-Channel ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
4 _{Symbol Parameter}
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-40
V
IDSS
Zero Gate Voltage Drain Current
VDS=-32V , VGS=0V
-1 uA
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=-250uA
-1 -2
-3
V
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^c
VGS=-10V , ID=-8A
VGS=-4.5V , ID=-6.5A
VDS=-10V , ID=-8A
29
36 m ohm
45
61 m ohm
29
S
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^c
VDS=-20V,VGS=0V
f=1.0MHz
1050
pF
125
pF
101
pF
tD(ON)
tr
tD(OFF)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD=-20V
ID=-1A
VGS=-10V
RGEN=6 ohm
17.5
ns
20
ns
63.2
ns
30.5
ns
Qg
Total Gate Charge
VDS=-20V,ID=-8A,VGS=-10V
VDS=-20V,ID=-8A,VGS=-4.5V
22.5
nC
11.1
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-20V,ID=-8A,
VGS=-10V
2
nC
6.2
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=-2A
-0.79 -1.2 V
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25^°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)
May,11,2010
3
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