STB416D Datasheet, PDF (4/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STB416D
N-Channel
35
VGS =10V
28
21
VGS =4.5V
VGS =4V
14
VGS =3.5V
7
VGS =3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
60
50
V GS =4.5V
40
30
20
V GS =10V
10
1
1
7
14
21
28
35
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
30
24
18
T j=125 C
12
25 C
6
-55 C
0
0 0.9 1.8 2.7 3.6 4.5 5.4
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8
V G S =10V
ID=9A
1.6
1.4
1.2
V G S =4.5V
1.0
I D =7 . 5 A
0
0 25 50 75 100 125 150
T j( C )
Tj, Junction Temperature ( C )
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
May,11,2010
4
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