STB416D Datasheet, PDF (7/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STB416D
P-Channel
30
VGS =-10V
24
18
12
VGS =-5V
VGS =-4.5V
VGS =-4V
VGS =-3.5V
6
VGS =-3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
90
75
60
V GS =-4.5V
45
30
V GS =-10V
15
1
1
6
12
18
24
30
-ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
V DS =V G S
ID=-250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C )
Figure 5. Gate Threshold Variation
with Temperature
7
Ver 1.0
30
24
18
12
T j=125 C
6
25 C
-55 C
0
0 1.0 2.0 3.0 4.0 5.0 6.0
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
1.5
1.4
V G S =-10V
ID=-8A
1.3
1.2
1.1
V G S =-4.5V
I D =-6 . 5 A
1.0
0
0 25 50 75 100 125 150
T j( C )
Tj, Junction Temperature ( C )
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
May,11,2010
www.samhop.com.tw