SCT2450KE Datasheet, PDF (9/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2450KE
Electrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
10000
1000
C_iss
100
C_oss
10
T_a=25ºC
f = 1MHz
V_GS = 0V
1
0.1
1
C_rss
10
100
1000
Drain - Source Voltage : V_DS [V]
Datasheet
Fig.16 Coss Stored Energy
10
9 ^Ta^=25ºC
8
7
6
5
4
3
2
1
0
0
200
400
600
800
Drain - Source Voltage : V_DS [V]
Fig.17 Switching Characteristics
10000
1000
t_f
t_d(off)
T_a = 25ºC
V_DD = 400V
V_GS = 18V
R_G= 0
Pulsed
100
t_d(on)
10
t_r
1
0.1
1
10
100
Drain Current : I_D [A]
Fig.18 Dynamic Input Characteristics
20
T_a = 25ºC
V_DD= 400V
I_D= 3A
15 ^Pulsed
10
5
0
0
5 10 15 20 25 30
Total Gate Charge : Q_g [nC]
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2017.07 - Rev.D