SCT2450KE Datasheet, PDF (2/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2450KE
Thermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
R_thJC
R_thJA
T_sold
Values
Unit
Min. Typ. Max.
-
1.36 1.77 °C/W
-
-
50 °C/W
-
-
265 °C
Electrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = 1mA
1200
-
-
V
Zero gate voltage
drain current
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
V_DS = 1200V, V_GS = 0V
I_DSS T_j = 25°C
-
T_j = 150°C
-
I_GSS V_GS = 22V, V_DS = 0V
-
I_GSS V_GS = 6V, V_DS = 0V
-
V_{GS (th)} V_DS = V_GS, I_D = 0.9mA
1.6
1
10
A
2
-
-
100 nA
-
100 nA
2.8 4.0
V
*1 Limited only by maximum temperature allowed.
*2 PW  10s, Duty cycle  1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
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2017.07 - Rev.D