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SCT2450KE Datasheet, PDF (8/14 Pages) Rohm – N-channel SiC power MOSFET
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SCT2450KE
Electrical characteristic curves
Datasheet
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
1.4
Ta=25ºC
1.2
Pulsed
1
0.8
ID = 6A
0.6
ID = 3A
0.4
0.2
0
6 8 10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
1
0.9
VGS= 18V
Plused
0.8
0.7
ID = 6A
0.6
0.5
0.4
ID = 3A
0.3
0.2
0.1
0
-50
0
50 100 150 200
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
10
VGS= 18V
Plused
1
0.1
0.1
Ta=150ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
1
10
100
Drain Current : ID [A]
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2017.07 - Rev.D
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