SCT2450KE Datasheet, PDF (1/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2450KE
N-channel SiC power MOSFET
Datasheet
V_DSS
R_DS(on) (Typ.)
I_D
P_D
1200V
450m
10A
85W
Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
Application
• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives
Outline
TO-247
Inner circuit
(1) ^{(2) (3)}
(2)
(1) Gate
(2) Drain
*1
(3) Source
(1)
*1 Body Diode
(3)
Packaging specifications
Packaging
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
30
Packing code
C
Marking
SCT2450KE
Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
T_c = 25°C
T_c = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (T_surge ˂ 300nsec)
Power dissipation (T_c = 25°C)
Junction temperature
Range of storage temperature
Symbol
Value
Unit
V_DSS
1200
V
I_D ^*1
10
A
I_D ^*1
7
A
I_D,pulse ^*2
25
A
V_GSS
6 to 22
V
V_GSS-surge*3
10 to 26
V
P_D
85
W
T_j
175
°C
T_stg
55 to 175
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/12
2017.07 - Rev.D