SCT2450KE Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2450KE
Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
100
90
T_a = 25ºC
I_D= 3A
80 ^{VGS = 18V/0V}
R_G= 0
70 L=500H
60
E_on
50
40
30
20
E_off
10
0
0
200 400 600 800
1000
Drain - Source Voltage : V_DS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
300
T_a = 25ºC
250
V_DD= 600V
V_GS = 18V/0V
R_G= 0
200 ^L=500H
150
E_on
100
50
E_off
0
0
2
4
6
8 10 12
Drain Current : I_D [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
120
110 ^Ta ^{= 25ºC}
100
V_DD= 600V
I_D= 3A
90 ^VGS ^{= 18V/0V}
80
L=500H
E_on
70
60
50
40
30
E_off
20
10
0
0
5 10 15 20 25 30
External Gate Resistance : R_G []
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10/12
2017.07 - Rev.D