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| SCT2450KE Datasheet, PDF (3/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2450KE
Datasheet
ï¬Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Static drain - source
on - state resistance
VGS = 18V, ID = 3A
RDS(on) *4 Tj = 25°C
Tj = 125°C
-
450 585 mï
-
610
-
Gate input resistance
Transconductance
Input capacitance
RG f = 1MHz, open drain
-
25
-
ï
gfs *4 VDS = 10V, ID = 3A
-
1.0
-
S
Ciss
VGS = 0V
-
463
-
Output capacitance
Coss VDS = 800V
-
21
-
pF
Reverse transfer capacitance
Crss f = 1MHz
-
4
-
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 500V
-
31
-
pF
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *4 VDD = 400V, VGS = 18V
-
19
-
tr *4
td(off) *4
ID = 3A
RL = 133ï
-
17
-
ns
-
38
-
tf *4
RG = 0ï
-
34
-
Turn - on switching loss
Turn - off switching loss
Eon *4
Eoff *4
VDD = 600V, ID=3A
VGS = 18V/0V
RG = 0ï, L=500ïH
*Eon includes diode
reverse recovery
-
47
-
ïJ
-
17
-
ï¬Gate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg *4 VDD = 400V
Qgs *4
Qgd *4
ID = 3A
VGS = 18V
V(plateau) VDD = 400V, ID = 3A
Values
Unit
Min. Typ. Max.
-
27
-
-
7
-
nC
-
9
-
-
10.5
-
V
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© 2013 ROHM Co., Ltd. All rights reserved.
3/12
2017.07 - Rev.D
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