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| SCT2080KE Datasheet, PDF (9/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2080KE
ï¬Electrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
10000
1000
100
Crss
Coss
Ciss
10
Ta = 25ºC
f = 1MHz
VGS = 0V
1
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Datasheet
Fig.16 Coss Stored Energy
40
Ta = 25ºC
30
20
10
0
0
200
400
600
800
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
10000
1000
100
tf
td(off)
tr
Ta = 25ºC
VDD = 400V
VGS = 18V
RG = 0â¦
Pulsed
10
td(on)
1
0.01
0.1
1
10
100
Drain Current : ID [A]
Fig.18 Dynamic Input Characteristics
20
Ta = 25ºC
VDD = 400V
15
ID = 10A
Pulsed
10
5
0
0 20 40 60 80 100 120
Total Gate Charge : Qg [nC]
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© 2012 ROHM Co., Ltd. All rights reserved.
9/12
2017.07 - Rev.G
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