SCT2080KE Datasheet, PDF (5/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2080KE
Electrical characteristic curves
Datasheet
Fig.1 Power Dissipation Derating Curve
300
250
200
150
100
50
0
0
50
100
150
200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
100
P_W = 100us
P_W = 1ms
10
Operation in this
area is limited
by R_DS(ON)
1
P_W = 10ms
　
P_W = 100ms
T_a = 25ºC
Single Pulse
0.1
0.1
1
10
100
1000
10000
Drain - Source Voltage : V_DS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
1
T_a = 25ºC
Single
0.1
0.01
0.001
0.0001 0.001 0.01 0.1
1
10
Pulse Width : PW [s]
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2017.07 - Rev.G