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SCT2080KE Datasheet, PDF (3/14 Pages) Rohm – N-channel SiC power MOSFET
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SCT2080KE
Datasheet
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Static drain - source
on - state resistance
Gate input resistance
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS = 18V, ID = 10A
RDS(on) *4 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
gfs *4 VDS = 10V, ID = 10A
Ciss
VGS = 0V
Coss VDS = 800V
Crss f = 1MHz
-
80
117 m
-
125
-
-
6.3
-

-
3.7
-
S
-
2080
-
-
77
-
pF
-
16
-
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 500V
-
116
-
pF
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *4 VDD = 400V, VGS = 18V
-
35
-
tr *4
td(off) *4
ID = 10A
RL = 40
-
36
-
ns
-
76
-
tf *4
RG = 0
-
22
-
Turn - on switching loss
Turn - off switching loss
Eon *4
Eoff *4
VDD = 600V, ID=10A
VGS = 18V/0V
RG = 0, L=500H
*Eon includes diode
reverse recovery
-
174
-
J
-
51
-
Gate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *4
Qgs *4
Qgd *4
VDD = 400V
ID = 10A
VGS = 18V
-
106
-
-
27
-
nC
-
31
-
Gate plateau voltage
V(plateau) VDD = 400V, ID = 10A
-
9.7
-
V
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