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| SCT2080KE Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2080KE
ï¬Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
300
Ta = 25ºC
250
ID=10A
VGS = 18V/0V
RG=0ï
200 L=500ïH
Eon
150
100
50
0
0
Eoff
200 400 600 800 1000
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
1200
1100
1000
Ta = 25ºC
VDD=600V
900
VGS = 18V/0V
800
RG=0ï
700
L=500ïH
Eon
600
500
400
300
200
100
Eoff
0
0 5 10 15 20 25 30 35
Drain - Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
500
450 Ta = 25ºC
400
VDD=600V
ID=10A
350
VGS = 18V/0V
L=500ïH
300
Eon
250
200
150
Eoff
100
50
0
0
5 10 15 20 25 30
External Gate Resistance : RG [ï]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
10/12
2017.07 - Rev.G
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