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SCT2080KE Datasheet, PDF (7/14 Pages) Rohm – N-channel SiC power MOSFET
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SCT2080KE
Electrical characteristic curves
Fig.8 Typical Transfer Characteristics
100
VDS = 10V
Pulsed
10
Ta= 150ºC
1
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
0.1
0.01
0
2 4 6 8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Datasheet
Fig.9 Typical Transfer Characteristics (II)
40
35
VDS = 10V
Pulsed
30
25
20
Ta= 150ºC
15
Ta= 75ºC
Ta= 25ºC
10
Ta= 25ºC
5
0
0 2 4 6 8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
5
4.5
VDS = 10V
4
ID = 10mA
3.5
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Junction Temperature : Tj [°C]
Fig.11 Transconductance vs. Drain Current
10
VDS = 10V
Pulsed
1
Ta = 150ºC
0.1
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.01
0.01
0.1
1
10
100
Drain Current : ID [A]
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