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| SCT2080KE Datasheet, PDF (8/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2080KE
ï¬Electrical characteristic curves
Datasheet
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.8
Ta = 25ºC
Pulsed
0.6
0.4
ID = 20A
0.2
0
6
ID = 10A
8 10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.15
VGS = 18V
Pulsed
0.1
ID = 20A
ID = 10A
0.05
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
1
VGS = 18V
Pulsed
0.1
0.01
0.1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = ï25ºC
1
10
100
Drain Current : ID [A]
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8/12
2017.07 - Rev.G
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