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| SCT2120AF_17 Datasheet, PDF (8/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2120AF
ï¬Electrical characteristic curves
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.6
Ta = 25ºC
0.5
Pulsed
0.4
0.3
ID = 21A
0.2
0.1
ID = 10A
0
6 8 10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Datasheet
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.3
0.25
VGS = 18V
Pulsed
0.2
0.15
0.1
ID = 20A
ID = 10A
0.05
0
-50
0
50 100 150 200
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
1
VGS = 18V
Pulsed
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.1
1
10
100
Drain Current : ID [A]
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8/12
2017.07 - Rev.E
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