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SCT2120AF_17 Datasheet, PDF (7/14 Pages) Rohm – N-channel SiC power MOSFET
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SCT2120AF
Electrical characteristic curves
Datasheet
Fig.8 Typical Transfer Characteristics (I)
10
VDS = 10V
Pulsed
1
0.1
0.01
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.001
0 2 4 6 8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Fig.9 Typical Transfer Characteristics (II)
24
22
20
VDS = 10V
Pulsed
18
16
14
12
10
8
6
4
2
0
0246
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
5
4.5
VDS = VGS
ID = 3.3mA
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
0
50
100 150 200
Junction Temperature : Tj [°C]
Fig.11 Transconductance vs. Drain Current
10
VDS = 10V
Pulsed
1
0.1
0.01
0.01
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
1
10
Drain Current : ID [A]
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