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| SCT2120AF_17 Datasheet, PDF (4/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2120AF
Datasheet
ï¬Body diode electrical characteristics (Source-Drain) (Ta = 25ï°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
IS *1
ISM *2
Tc = 25ï°C
-
-
29
A
-
-
72
A
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD *4
trr *4
Qrr *4
Irrm *4
VGS = 0V, IS = 10A
IF = 10A, VR = 400V
di/dt = 160A/ïs
-
4.3
-
V
-
33
-
ns
-
53
-
nC
-
3.0
-
A
ï¬Typical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1
96.1m
Rth2
404m
K/W
Rth3
196m
Symbol
Cth1
Cth2
Cth3
Value
1.55m
5.23m
83.3m
Unit
Ws/K
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
4/12
2017.07 - Rev.E
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