 English |
|
|
|
|
|
|
|
| SCT2120AF_17 Datasheet, PDF (2/14 Pages) Rohm – N-channel SiC power MOSFET | |||
| |||
| ◁ |
SCT2120AF
ï¬Thermal resistance
Parameter
Thermal resistance, junction - case
Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC
Tsold
Values
Unit
Min. Typ. Max.
-
0.70 0.91 ï°C/W
-
-
265
ï°C
ï¬Electrical characteristics (Ta = 25ï°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
650
-
-
V
Zero gate voltage
drain current
VDS = 650V, VGS = 0V
IDSS Tj = 25ï°C
-
Tj = 150°C
-
Gate - Source leakage current
IGSS+ VGS = ï«22V, VDS = 0V
-
Gate - Source leakage current
IGSS- VGS = ï6V, VDS = 0V
-
Gate threshold voltage
VGS (th) VDS = VGS, ID = 3.3mA
1.6
1
10
ïA
2
-
-
100
nA
-
-100 nA
2.8 4.0
V
*1 Limited only by maximum temperature allowed.
*2 PW ï£ 10ïs, Duty cycle ï£ 1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/12
2017.07 - Rev.E
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese