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| SCT2120AF_17 Datasheet, PDF (3/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2120AF
ï¬Electrical characteristics (Ta = 25ï°C)
Parameter
Symbol
Conditions
Static drain - source
on - state resistance
Gate input resistance
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
VGS = 18V, ID = 10A
RDS(on) *4 Tj = 25ï°C
Tj = 125°C
RG f = 1MHz, open drain
gfs *4 VDS = 10V, ID = 10A
Ciss
VGS = 0V
Coss VDS = 500V
Crss f = 1MHz
Co(er)
VGS = 0V
VDS = 0V to 300V
td(on) *4
tr *4
td(off) *4
tf *4
VDD = 300V, ID = 10A
VGS = 18V/0V
RL = 30ï
RG = 0ï
Eon *4
Eoff *4
VDD = 300V, ID=10A
VGS = 18V/0V
RG = 0â¦, L=500µH
*Eon includes diode
reverse recovery
Datasheet
Values
Unit
Min. Typ. Max.
-
120 156 mï
-
149
-
-
13.8
-
ï
-
2.7
-
S
-
1200
-
-
90
-
pF
-
13
-
-
115
-
pF
-
22
-
-
31
-
ns
-
60
-
-
19
-
-
61
-
µJ
-
41
-
ï¬Gate Charge characteristics (Ta = 25ï°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *4
Qgs *4
Qgd *4
VDD = 300V
ID = 10A
VGS = 18V
-
61
-
-
14
-
nC
-
21
-
Gate plateau voltage
V(plateau) VDD = 300V, ID = 10A
-
10.4
-
V
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3/12
2017.07 - Rev.E
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