SCT2120AF_17 Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2120AF
Electrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
120
110 _{Ta = 25ºC}
100 ^ID^=10A
90
V_GS = 18V/0V
R_G = 0Ω
80 L=500µH
E_on
70
60
50
40
E_off
30
20
10
0
0
100 200 300 400 500
Drain - Source Voltage : V_DS [V]
Datasheet
Fig.20 Typical Switching Loss
vs. Drain Current
500
450 T_a = 25ºC
400
V_DD=300V
V_GS = 18V/0V
350
R_G = 0Ω
L=500µH
300
E_on
250
200
150
100
E_off
50
0
0
5 10 15 20 25 30
Drain - Current : I_D [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
200
T_a = 25ºC
V_DD=300V
150 ^ID^=10A
V_GS = 18V/0V
L=500µH
E_on
100
E_off
50
0
0
5 10 15 20 25 30
External Gate Resistance : R_G [Ω]
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10/12
2017.07 - Rev.E