H8S-2643 Datasheet, PDF (938/1277 Pages) Renesas Technology Corp – 16-Bit Single-Chip Microcomputer

Section 22 ROM
VCC
tosc1
Memory read
mode
Command wait state
Command Auto-program mode Normal/abnormal
tbmv ^{wait state}
Auto-erase mode
end decision _tdwn
RES
FWE
Note: When using other than the automatic write mode and automatic erase mode, drive the FWE
input pin low.
Figure 22.25 Oscillation Stabilization Time, Boot Program Transfer Time, and
Power-Down Sequence
22.11.9 Notes on Memory Programming
(1) When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming.
(2) When performing programming using programmer mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Notes: The flash memory is initially in the erased state when the device is shipped by Renesas.
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
Auto-programming should be performed once only on the same address block. Additional
programming cannot be performed on previously programmed address blocks.
Rev. 3.00 Jan 11, 2005 page 884 of 1220
REJ09B0186-0300O