HAT2141H Datasheet, PDF (9/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

Reverse Drain Current vs.
Source to Drain Voltage
20
16
10 V
5V
V_GS = 0
12
8
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SDF (V)
HAT2141H
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
I _AP = 15 A
40
V _DD = 50 V
duty < 0.1 %
Rg > 50 Ω
30
20
10
0
25 50 75 100 125 150
Channel Temperature Tch (˚C)
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
E_AR =
1
2
L • I_AP² •
V_DSS
V_DSS - V _DD
I _AP
I_D
V_(BR)DSS
V_DS
VDD
0
Rev.5, Sep. 2002, page 7 of 10