HAT2141H Datasheet, PDF (3/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2141H
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 7 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on)
=
22
mΩ
typ.
(at
V
GS
=
10
V)
Outline
LFPAK
5
D
4
G
SSS
12 3
ADE-208-1582E(Z)
Preliminary
6th. Edition
Sep. 2002
5
1 ²³⁴
1, 2, 3 Source
4
Gate
5
Drain