HAT2141H Datasheet, PDF (8/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2141H
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I _DR (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
300
Coss
100
Crss
30
VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
200
I _D = 15 A
20
V_GS
160
16
120 _VDS
80
V_DD = 100 V 12
50 V
25 V
8
40
V_DD = 100 V
4
50 V
25 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
1000
500
Switching Characteristics
200
100
t _d(off)
50
t _d(on)
20
tr
10
tf
5
2 ^{VGS = 10 V , VDS = 30 V}
1 ^{Rg = 4.7 Ω, duty < 1 %}
0.1 0.3 1 3 10 30 100
Drain Current I _D (A)
Rev.5, Sep. 2002, page 6 of 10