HAT2141H Datasheet, PDF (6/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2141H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
500
100
10
Operation in
1
this area is
limited by R_DS(on)
PW
=
10
1 _ms¹⁰¹⁰⁰µµ_ss
ms _{(1 shot)}
DC Operation
Tc = 25°C
0.1
Ta = 25°C
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
20
10 V
Pulse Test
16
4.5 V
4.0 V
12
8
3.7 V
4
V_GS = 3.5 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
20
V _DS = 10 V
Pulse Test
16
12
8
Tc = 75°C
4
25°C
-25°C
0
2
4
6
8
10
Gate to Source Voltage V GS (V)
Rev.5, Sep. 2002, page 4 of 10