HAT2141H Datasheet, PDF (7/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

Drain to Source Saturation Voltage vs.
Gate to Source Voltage
800
Pulse Test
600
400
I D = 10 A
200
5A
2A
0
4
8
12 16 20
Gate to Source Voltage V _GS (V)
HAT2141H
Static Drain to Source on State Resistance
vs. Drain Current
1000
500 ^{Pulse Test}
200
100
50
V_GS = 7 V
20
10 V
10
5
2
1
0.1 0.2 0.5 1 2
5 10
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
I D = 2 A, 5 A, 10 A
40
V _GS = 7 V
20
10 V
2 A, 5 A, 10 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = -25°C
10
75°C
25°C
3
1
0.3
0.1
0.1
V _DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I _D (A)
Rev.5, Sep. 2002, page 5 of 10