HAT2141H Datasheet, PDF (10/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2141H
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.01
0.02
0.01
1shot
pulse
10 µ
100 µ
θ_{ch - c(t) =} γ_{s (t) •} θ _{ch - c}
θ_{ch - c = 6.25°C/ W, Tc = 25°C}
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
VDS
= 30 V
Switching Time Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
Rev.5, Sep. 2002, page 8 of 10