NP32N055IHE_15 Datasheet, PDF (8/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET

NP32N055HHE, NP32N055IHE, NP32N055SHE
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (JEITA) / MP-3
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 TYP.
0.5^{+−00..21}
2.3 TYP.
0.5^{+−00..21}
1. Gate
2. Drain
3. Source
4. Fin (Drain)
3) TO-252 (JEDEC) / MP-3ZK
6.5±0.2
5.1 TYP.
4.3 MIN.
4
2.3±0.1
0.5±0.1
No Plating
123
1.14 MAX.
2.3 2.3
No Plating
0.76±0.12
0 to 0.25
0.5±0.1
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2) TO-252 (JEITA) / MP-3Z
6.5±0.2
2.3±0.2
5.0±0.2
4
DESIGN^0.5±0.1
NEW ^{1 2 3}
1.1±0.2
NOT ^{FOR 2.3 TYP.}
0.9 MAX.
2.3 TYP.
0.8 MAX.
0.8 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
6
Data Sheet D14155EJ4V0DS