NP32N055IHE_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HHE, NP32N055IHE, NP32N055SHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
These products are N-Channel MOS Field Effect
Transistors designed for high current switching applications.
PART NUMBER
NP32N055HHE
PACKAGE
TO-251 (JEITA) / MP-3
FEATURES
NP32N055IHE ^Note
TO-252 (JEITA) / MP-3Z
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 16 A)
NP32N055SHE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
• Low Ciss : Ciss = 1100 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (Pulse) ^Note1
ID(DC)
ID(pulse)
±32
A
±100
A
Total Power Dissipation (TA = 25°C)
PT
1.2
W
Total Power Dissipation (TC = 25°C)
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
PT
66
W
IAS
26 / 21 / 7 A
EAS
6.7 / 44 / 49 mJ
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–55 to + 175 °C
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.27 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14155EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005