NP32N055IHE_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET

NP32N055HHE, NP32N055IHE, NP32N055SHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
VDS = 55 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 16 A
VGS = 10 V, ID = 16 A
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDD = 28 V, ID = 16 A
VGS = 10 V
RG = 1 Ω
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ^Note
Reverse Recovery Time
Reverse Recovery Charge
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDD = 44 V
VGS = 10 V
ID = 32 A
IF = 32 A, VGS = 0 V
IF = 32 A, VGS = 0 V
di/dt = 100 A/µs
Note Pulsed
MIN.
2.0
6
TYP.
3.0
12
19
1100
180
95
16
11
29
10
21
6
8
1.0
40
57
MAX.
10
±10
4.0
25
1600
270
170
35
27
58
24
32
UNIT
µA
µA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
BVDSS
IAS
ID
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D14155EJ4V0DS