NP32N055IHE_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET

NP32N055HHE, NP32N055IHE, NP32N055SHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30
VGS = 10 V
20
10
ID = 16 A
0
−50
0
50 100 150
Tch - Channel Temperature - ˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
Coss
100
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Drain Current - A
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
10
tr
td(off)
td(on)
1
0.1
1
10
100
ID - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
14
60
VDD = 44 V
28 V
11 V
12
VGS
10
40
8
6
20
4
VDS
2
ID = 32 A
0
0 4 8 12 16 20 24 28 32
QG - Gate Charge - nC
Data Sheet D14155EJ4V0DS
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