NP32N055IHE_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET

NP32N055HHE, NP32N055IHE, NP32N055SHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R(a^DS_t^(oV^{nG) SLi=m1it0edV)}_LiPmoitwe^I_de^D_rDD^(D_iCs^C_sip⁾_ation
ID(pulse)
1 _ms
PW
100 _µs
=
10
µ_s
1
TC = 25˚C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
60
50 ^{49 mJ}
44 mJ
40
30
IAS = 7 A
21 A
26 A
20
10 _{6.7 mJ}
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 125 ˚C/W
10
Rth(ch-C) = 2.27 ˚C/W
1
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
TC = 25˚C
10
100
1000
Data Sheet D14155EJ4V0DS
3