NP32N055IHE_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET

NP32N055HHE, NP32N055IHE, NP32N055SHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100 _Pulsed
10
TA = −55˚C
25˚C
75˚C
150˚C
1
175˚C
0.1
0.01
1.0
VDS = 10 V
2.0
3.0
4.0
5.0
6.0
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
TA = 175˚C
75˚C
1
25˚C
−55˚C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
70
60
50
40
30
VGS = 10 V
20
10
0
0
1
10
100
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
120
Pulsed
100
VGS =10 V
80
60
40
20
0
0 1 23 4 5 6 78
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
30
ID = 16 A
20
10
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
4.0
ID = 250 µ A
3.0
2.0
1.0
0
−50
0
50
100 150
Tch - Channel Temperature - ˚C
4
Data Sheet D14155EJ4V0DS