HAF2015RJ_15 Datasheet, PDF (8/12 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2015RJ
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
12
Shutdown Case Temperature vs.
Gate to Source Voltage
200
10
180
8
V_DD = 16 V
160
6
140
4
2
0
0.0001 0.001 0.01
0.1
1
Shutdown Time of Load-Short Test PW (S)
120
I_D = 0.2 A
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D = ^PW
T
PW
T
0.0001
10 µ 100 µ 1 m
10 m 100 m
1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D = ^PW
T
PW
T
10 m 100 m
1
10
Pulse Width PW (S)
100 1000 10000
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
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