HAF2015RJ_15 Datasheet, PDF (7/12 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2015RJ
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
0.5 A
0.2 A
I_D = 1 A
0.15
V_GS = 5 V
I_D = 1 A
0.2 A 0.5 A
0.10
10 V
0.05
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
10
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
5
V_GS = 5 V
4
Pulse Test
3
0V
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
10
V_DS = 10 V
5
Pulse Test
Tc = –25°C
25°C
2
1
75°C
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
Switching Characteristics
100
V_GS = 5 V, V_DD = 30 V
50 ^{PW = 300 µs, duty ≤ 1 %}
20
tr
10
5
td(on)
2
1
td(off)
tf
0.5
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
Drain Current I_D (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
300
100
30
V_GS = 0
f = 1 MHz
10
0
10
20
30
40 50
Drain to Source Voltage V_DS (V)
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
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